Jordan HVPE Single-Crystal Growth Equipment — Vertical

Applicable Fields: Single Crystal Growth, Epitaxial Growth Relevant Industries: Single Crystal Growth, Epitaxial Growth Suitable Materials: GaN (single crystal), AlN (single crystal/epitaxial), Ga2O3 (epitaxial), GaAs (epitaxial) Wafer Size: 8/6 inches

Category:

JordanCompound Crystal Equipment

JordanHVPE Method Single-Crystal Growth Equipment

Phone:+86-15562450816

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Product Description

Product Applications:

Applicable Fields: Single Crystal Growth, Epitaxial Growth Relevant Industries: Single Crystal Growth, Epitaxial Growth

Suitable Materials: GaN (single crystal), AlN (single crystal/epitaxial), Ga2O3 (epitaxial), GaAs (epitaxial)

Wafer Size: 8/6 inches

Technical Specifications / Technical Parameters:

Heating Temperature: 1100°C, 1600°C (high-temperature HVPE)