Oxidation/Diffusion/Annealing Furnace

Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors Suitable Materials: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) Wafer Size: 12/8 inches Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy Formation, Diffusion, High-Temperature Annealing

LPCVD Equipment

Applicable Fields: Integrated Circuits, Advanced Packaging, Compound Semiconductors Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors Applicable Materials: Si, SiC, GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) Wafer Size: 12/8  inches Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, TEOS Silicon Dioxide Deposition, HTO, and More

SiC High-Temperature Annealing Furnace

♦ Application Fields: Compound Semiconductors Relevant Industries: Compound Semiconductors ♦ Suitable Material: SiC Suitable for Processing: Silicon Carbide (SiC) ♦ Wafer Size: 8/6 inches Wafer Size: 8/6 inch ♦ Applicable Processes: High-Temperature Annealing Applicable Processes: Annealing of SiC and GaN wafers

SiC High-Temperature Oxidation Furnace

♦ Application Fields: Compound Semiconductors Relevant Industries: Compound Semiconductors ♦ Suitable Material: SiC Ideal for Processing: Silicon Carbide (SiC) ♦ Wafer Size: 8/6 inches ♦ Applicable Process: High-Temperature Oxidation

LPCVD Equipment

♦ Relevant Industries: Integrated Circuits, Advanced Packaging ♦Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ♦ Wafer Size: 12/8 inch

Oxidation/Diffusion/Annealing Furnace

♦ Applicable Fields: Integrated Circuits, Advanced Packaging ♦ Suitable Materials: Si, SiC ♦ Wafer Size: 12/8 inches ♦ Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion