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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
One of the important equipment for semiconductor integrated circuit manufacturing, mainly used for POLY, D-POLY, SiN, LP-TEOS; the vertical LPCVD adopts a bell jar structure, designed with a nested cavity mechanical hand transfer component and a boat rotation component, featuring advantages such as small footprint, high film uniformity, and high process stability.
LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing,which is mainly used for the growth of LP-POLY,LP-DPOLY,LP-SiN，LP-TEOS thin films.
SiC High Temperature Annealing Furnace
Specially used for ion implantation annealing process of silicon carbide (SiC) and gallium nitride (GaN) devices, with a special non-metallic heating design to increase the processing temperature to 2000℃.
SiC High Temperature Oxidation Furnace
A high-temperature oxidation process specifically designed for SiC wafers, capable of completing the oxidation process in a high-temperature vacuum environment. O2, N2O, NO, NO2 or wet oxidation can be used, using non-metallic heating and vacuum equipment.
This equipment is one of the important process equipment in the pre production process of semiconductor production lines, used for oxidation, diffusion, annealing, alloy and other processes in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices, etc.
This equipment is one of the important process equipment in the pre production process of semiconductor production lines, used for oxidation, diffusion, annealing, alloy and other processes in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices, etc.