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Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
SiC High Temperature Oxidation Furnace
Classification:
Oxidation/Diffusion/Annealing
Semiconductor process equipment
SiC High Temperature Oxidation Furnace
Summary:
Key words:
SiC High Temperature Oxidation Furnace
Product Introduction:
A high-temperature oxidation process specifically designed for SiC wafers, capable of completing the oxidation process in a high-temperature vacuum environment. O2, N2O, NO, NO2 or wet oxidation can be used, using non-metallic heating and vacuum equipment.
A high-temperature oxidation process specifically designed for SiC wafers, capable of completing the oxidation process in a high-temperature vacuum environment. O2, N2O, NO, NO2 or wet oxidation can be used, using non-metallic heating and vacuum equipment.
Applicable process: oxidation
Applicable process: oxidation
Technical Indicators:
♦ Wafer size: 6-8 inches
♦ Process temperature range: 800-1600°C
♦ Batch capacity: 50-75 pcs
Product characteristics:
♦ The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
♦ Robot Auto Transfer
Robot Auto Transfer (Optional)
♦ Multi-point temperature control, uniform temperature
Multi-point temperature control, uniform temperature
♦ Has various alarm functions and safety protection functions
Has various alarm functions and safety protection functions.
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