Oxidation/Diffusion/Annealing Furnace

Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors Suitable Materials: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) Wafer Size: 8/6 inches Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy Formation, Diffusion, High-Temperature Annealing

LPCVD Equipment

Relevant Fields: Integrated Circuits, Advanced Packaging, Compound Semiconductors Applicable Materials: Si, SiC, GaN Wafer Sizes: 6-inch, 8-inch, 12-inch Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, TEOS Silicon Dioxide Deposition, HTO, and More

SiC High-Temperature Annealing Furnace

♦ Application Fields: Compound Semiconductors Relevant Industries: Compound Semiconductors ♦ Suitable Material: SiC Suitable for Processing: Silicon Carbide (SiC) ♦ Wafer Size: 8/6 inches Wafer Size: 8/6 inch ♦ Applicable Processes: High-Temperature Annealing Applicable Processes: Annealing of SiC and GaN wafers

SiC High-Temperature Oxidation Furnace

♦ Application Fields: Compound Semiconductors Relevant Industries: Compound Semiconductors ♦ Suitable Material: SiC Ideal for Processing: Silicon Carbide (SiC) ♦ Wafer Size: 8/6 inches ♦ Applicable Process: High-Temperature Oxidation

LPCVD Equipment

♦ **Applicable Fields:** Integrated Circuits, Advanced Packaging Relevant Industries: Integrated Circuits, Advanced Packaging ♦ **Applicable Materials:** Silicon (Si), Silicon Carbide (SiC) Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ♦ **Wafer Sizes:** 12/8/6 inches Wafer Size: 12/8/6 inch ♦ **Applicable Processes:** Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, and more

Oxidation/Diffusion/Annealing Furnace

♦ **Application Areas:** Integrated Circuits, Advanced Packaging Relevant Industries: Integrated Circuits, Advanced Packaging ♦ **Applicable Materials:** Si, SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ♦ **Wafer Sizes:** 12/8/6 inches Wafer Size: 12/8/6 inch ♦ **Applicable Processes:** Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion

Vertical Bridgman (VB) Furnace (Non-Iridium Technology)

Application Area: Single Crystal Growth Relevant Industries: Single Crystal Growth Suitable Materials: Ga2O3, GaAs, InP, and more Suitable for Processing: Ga2O3 (Gallium Oxide), GaAs (Gallium Arsenide), InP (Indium Phosphide), etc. Wafer Sizes: 12/8/6 inches

HVPE Single-Crystal Growth Equipment — Horizontal Type

Relevant Applications: Single Crystal Growth, Epitaxial Growth Suitable Materials: GaN (single crystal), AlN (single crystal/epitaxial), Ga₂O₃ (epitaxial), GaAs (epitaxial) Wafer Sizes Available: 12"/8"/6"/4" inches

HVPE Single-Crystal Growth Equipment — Vertical

Relevant Applications: Single Crystal Growth, Epitaxial Growth Relevant Industries: Single Crystal Growth, Epitaxial Growth Suitable Materials: GaN (single crystal), AlN (single crystal/epitaxial), Ga₂O₃ (epitaxial), GaAs (epitaxial) Wafer Sizes Available: 12"/8"/6"/4" inches