Oxidation/Diffusion/Annealing Furnace

Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors Suitable Materials: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) Wafer Size: 12/8 inches Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy Formation, Diffusion, High-Temperature Annealing

LPCVD Equipment

Applicable Fields: Integrated Circuits, Advanced Packaging, Compound Semiconductors Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors Applicable Materials: Si, SiC, GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) Wafer Size: 12/8  inches Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, TEOS Silicon Dioxide Deposition, HTO, and More

SiC High-Temperature Annealing Furnace

♦ Application Fields: Compound Semiconductors Relevant Industries: Compound Semiconductors ♦ Suitable Material: SiC Suitable for Processing: Silicon Carbide (SiC) ♦ Wafer Size: 8/6 inches Wafer Size: 8/6 inch ♦ Applicable Processes: High-Temperature Annealing Applicable Processes: Annealing of SiC and GaN wafers

SiC High-Temperature Oxidation Furnace

♦ Application Fields: Compound Semiconductors Relevant Industries: Compound Semiconductors ♦ Suitable Material: SiC Ideal for Processing: Silicon Carbide (SiC) ♦ Wafer Size: 8/6 inches ♦ Applicable Process: High-Temperature Oxidation

LPCVD Equipment

♦ Relevant Industries: Integrated Circuits, Advanced Packaging ♦Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ♦ Wafer Size: 12/8 inch

Oxidation/Diffusion/Annealing Furnace

♦ Applicable Fields: Integrated Circuits, Advanced Packaging ♦ Suitable Materials: Si, SiC ♦ Wafer Size: 12/8 inches ♦ Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion

HVPE Single-Crystal Growth Equipment — Horizontal Type

Relevant Applications: Single Crystal Growth, Epitaxial Growth Suitable Materials: GaN (single crystal), AlN (single crystal/epitaxial), Ga₂O₃ (epitaxial), GaAs (epitaxial) Wafer Sizes Available: 12"/8"/6"/4" inches

HVPE Single-Crystal Growth Equipment — Vertical

Applicable Fields: Single Crystal Growth, Epitaxial Growth Relevant Industries: Single Crystal Growth, Epitaxial Growth Suitable Materials: GaN (single crystal), AlN (single crystal/epitaxial), Ga2O3 (epitaxial), GaAs (epitaxial) Wafer Size: 8/6 inches

PVT Crystal Growth Furnace – Resistance Furnace

Applicable Field: Single Crystal Growth  Applicable materials: Si, AlN  Wafer sizes: 12/8 inches, with 8-inch multi-crucible options.