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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
HVPE Epitaxy Furnace - Vertical
This device is mainly used for the epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
This device is mainly used for the growth of compound crystals such as Gallium Arsenide (GaAs) and Indium Phosphide (InP). The device consists of a rack, an ampoule support mechanism, a heater, and a control system, capable of precise control of ampoule movement and rotation.
Mold Method Crystal Growth Furnace
This device is mainly used for the growth of gallium oxide (Ga2O3) single crystals. The raw materials are placed in a mold with a narrow slit, and the molten liquid rises to the top of the mold through siphoning, where it is induced to crystallize into a single crystal by the seed crystal.
HVPE Crystal Growth Furnace - Horizontal
This device is mainly used for the growth of gallium nitride (GaN) single crystals.
HVPE Crystal Growth Furnace - Vertical
This device is mainly used for the growth of gallium nitride (GaN) single crystals.
SiC seed crystal bonding equipment
This device bonds SiC seed crystals to graphite using organic adhesive. Improving the bonding quality of the seed crystals is the primary prerequisite for ensuring the growth of high-quality SiC crystals.
PVT method long crystal furnace - resistance furnace
This device is mainly used for the growth of silicon carbide (SiC) and aluminum nitride (AIN) single crystals.
PVT method long crystal furnace - induction furnace
This device is mainly used for the growth of silicon carbide (SiC) and aluminum nitride (AIN) single crystals.
Liquid Phase Method Crystal Growth Furnace
The liquid phase method can achieve the growth of SiC single crystals at lower temperatures (below 2000℃), theoretically making it easier to obtain high-quality single crystals. It utilizes a temperature gradient as the driving force for crystal growth.