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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
Vertical Bridgman Method (VB) Furnace (Non-Iridium Technology)
This equipment is mainly used for single crystal growth of Gallium Oxide (Ga2O3) (non-iridium method), where the raw material is placed in a vertical crucible and then directionally solidified from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slow cooling. Provide 2 inches validation process.
HVPE Epitaxy Furnace - Horizontal
This device is mainly used for epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
HVPE Epitaxy Furnace - Vertical
This device is mainly used for epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
Mold Method Crystal Growth Furnace
This device is mainly used for gallium oxide (Ga2O3) single crystal growth, the raw material is placed in the mold with a slit, the molten liquid rises to the top of the mold by siphoning, and is induced by the seed crystals to crystallize and grow into a single crystal.