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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
SiC High Temperature Oxidation Furnace
A high-temperature oxidation process specifically designed for SiC wafers, capable of completing the oxidation process in a high-temperature vacuum environment. O2, N2O, NO, NO2 or wet oxidation can be used, using non-metallic heating and vacuum equipment.