Product classification

Contact Information

Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park

Telephone:+86-15562450816

Mailbox:liguan1218@163.com

SiC High Temperature Oxidation Furnace

Classification:

Oxidation/Diffusion/Annealing

Semiconductor process equipment

Summary:

A high-temperature oxidation process specifically designed for SiC wafers, capable of completing the oxidation process in a high-temperature vacuum environment. O2, N2O, NO, NO2 or wet oxidation can be used, using non-metallic heating and vacuum equipment.

Key words:

SiC High Temperature Oxidation Furnace

Product Introduction:

♦ A high-temperature oxidation process specifically designed for SiC wafers, capable of completing the oxidation process in a high-temperature vacuum environment. O2, N2O, NO, NO2 or wet oxidation can be used, using non-metallic heating and vacuum equipment.

♦ Applicable process: oxidation

Technical Indicators:

♦ Wafer size: 6-8 inches

♦ Process temperature range: 800-1600°C

♦ Batch capacity: 50-75 pcs

Product characteristics:

♦ The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable.

♦ Robot Auto Transfer.

♦ Multi-point temperature control, uniform temperature.

♦ Has various alarm functions and safety protection functions.

SiC High Temperature Annealing Furnace

Horizontal furnace