HVPE Epitaxy Furnace-Products-Liguan Microelectronics Equipment-Crystal

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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City

This device is mainly used for the epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.

This device is mainly used for the epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.

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Diffusion/oxidation/annealing

CVD equipment

SiC single crystal growth equipment

GaN single crystal growth equipment

Ga2O3 single crystal growth equipment

Diamond single crystal growth equipment

Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park