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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
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SiC High-Temperature Annealing Furnace
The ion implantation annealing process specifically designed for silicon carbide (SiC) and gallium nitride (GaN) devices uses a special metal-free heating design to raise the processing temperature to 2000℃. Applicable process: Annealing of SiC and GaN wafers.