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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
SiC High Temperature Annealing Furnace
Specially used for ion implantation annealing process of silicon carbide (SiC) and gallium nitride (GaN) devices, with a special non-metallic heating design to increase the processing temperature to 2000℃.