Product display
Product classification
Contact Information
Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
SiC seed crystal bonding equipment
This device bonds SiC seed crystals to graphite using organic adhesive. Improving the bonding quality of the seed crystals is the primary prerequisite for ensuring the growth of high-quality SiC crystals.
PVT method long crystal furnace - resistance furnace
This device is mainly used for the growth of silicon carbide (SiC) and aluminum nitride (AIN) single crystals.
PVT method long crystal furnace - induction furnace
This device is mainly used for the growth of silicon carbide (SiC) and aluminum nitride (AIN) single crystals.
Liquid Phase Method Crystal Growth Furnace
The liquid phase method can achieve the growth of SiC single crystals at lower temperatures (below 2000℃), theoretically making it easier to obtain high-quality single crystals. It utilizes a temperature gradient as the driving force for crystal growth.