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Liquid Phase Method Crystal Growth Furnace


Classification:

SiC single crystal growth equipment

Liquid Phase Method Crystal Growth Furnace


Summary:

This equipment is mainly used for the single crystal growth of silicon carbide (SiC). The liquid phase method can achieve the growth of SiC single crystals at much lower temperatures (<2000℃), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.

Key words:



Liquid Phase Method Crystal Growth Furnace


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