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Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
Liquid Phase Method Crystal Growth Furnace
Classification:
SiC single crystal growth equipment
Liquid Phase Method Crystal Growth Furnace
Summary:
Key words:
Liquid Phase Method Crystal Growth Furnace
Product Introduction:
This equipment is mainly used for the single crystal growth of silicon carbide (SiC). The liquid phase method can achieve the growth of SiC single crystals at much lower temperatures (<2000℃), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.
Product Characteristics:
Provide 2 inches validation process
♦ Crystal Size: 6/8 inches
♦ Temperature range: 1500-2100℃
♦ Vacuum Pressure: 1 * 10-3pa
♦ Lift/crucible lever: lift rate 0.2-400mm/h, rotation rate 0.5-50rpm
♦ Weighing: 6kg accuracy: 0.01g
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