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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
This device is mainly used for the preparation of single crystal diamond. It can excite a plasma cluster with high stability, thus ensuring the continuity of single crystal growth and providing a strong guarantee for the synthesis of large-size single crystal diamond.
Vertical Bridgman Method (VB) Furnace (Non-Iridium Technology)
This equipment is mainly used for single crystal growth of Gallium Oxide (Ga2O3) (non-iridium method), where the raw material is placed in a vertical crucible and then directionally solidified from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slow cooling. Provide 2 inches validation process.
HVPE Epitaxy Furnace - Horizontal
This device is mainly used for epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
HVPE Epitaxy Furnace - Vertical
This device is mainly used for epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
This device is mainly used for the growth of compound crystals such as Gallium Arsenide (GaAs) and Indium Phosphide (InP). The device consists of a rack, an ampoule support mechanism, a heater, and a control system, capable of precise control of ampoule movement and rotation.
Mold Method Crystal Growth Furnace
This device is mainly used for gallium oxide (Ga2O3) single crystal growth, the raw material is placed in the mold with a slit, the molten liquid rises to the top of the mold by siphoning, and is induced by the seed crystals to crystallize and grow into a single crystal.
HVPE Crystal Growth Furnace - Horizontal
This equipment is mainly used for the growth of gallium nitride (GaN) single crystal;
HVPE Crystal Growth Furnace - Vertical
This equipment is mainly used for the growth of gallium nitride (GaN) single crystal;
SiC seed crystal bonding equipment
This device bonds SiC seed crystals to graphite using an organic adhesive. Improving the bonding quality of seed crystals is the primary prerequisite to ensure the growth of high quality SiC crystals.