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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
This device is mainly used for preparing single crystal diamonds. It can excite a highly stable plasma cluster, thereby ensuring the continuity of single crystal growth, providing a strong guarantee for the synthesis of large-sized single crystal diamonds.
Vertical Bridgman Method (VB) Furnace (Non-Iridium Technology)
This device is mainly used for the growth of gallium oxide (Ga2O3) single crystals (iridium-free method). The raw materials are placed in a vertical crucible, and then directional solidification is performed starting from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slowly lowering the temperature.
HVPE Epitaxy Furnace - Horizontal
This device is mainly used for the epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
HVPE Epitaxy Furnace - Vertical
This device is mainly used for the epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
This device is mainly used for the growth of compound crystals such as Gallium Arsenide (GaAs) and Indium Phosphide (InP). The device consists of a rack, an ampoule support mechanism, a heater, and a control system, capable of precise control of ampoule movement and rotation.
Mold Method Crystal Growth Furnace
This device is mainly used for the growth of gallium oxide (Ga2O3) single crystals. The raw materials are placed in a mold with a narrow slit, and the molten liquid rises to the top of the mold through siphoning, where it is induced to crystallize into a single crystal by the seed crystal.
HVPE Crystal Growth Furnace - Horizontal
This device is mainly used for the growth of gallium nitride (GaN) single crystals.
HVPE Crystal Growth Furnace - Vertical
This device is mainly used for the growth of gallium nitride (GaN) single crystals.
SiC seed crystal bonding equipment
This device bonds SiC seed crystals to graphite using organic adhesive. Improving the bonding quality of the seed crystals is the primary prerequisite for ensuring the growth of high-quality SiC crystals.