Product classification

Contact Information

Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park

Telephone:+86-15562450816

Mailbox:liguan1218@163.com

Vertical Bridgman Method (VB) Furnace (Non-Iridium Technology)

Classification:

Ga2O3 single crystal growth and epitaxy equipment

Summary:

This device is mainly used for the growth of gallium oxide (Ga2O3) single crystals (iridium-free method). The raw materials are placed in a vertical crucible, and then directional solidification is performed starting from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slowly lowering the temperature.

Key words:

Vertical Bridgman Method (VB) Furnace (Non-Iridium Technology)

Product Introduction:

This equipment is mainly used for single crystal growth of Gallium Oxide (Ga2O3) (non-iridium method), where the raw material is placed in a vertical crucible and then directionally solidified from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slow cooling.

Provide 2 inches validation process.

Product Characteristics:

♦ Capacity:2-6 inches

♦ Maximum temperature: 1850°C

♦ Heating method: Resistance heating/RF heating

♦ Automation: Full automation (except loading and unloading)

♦ Air Circuit: 3 ways

♦ Substrate: 2 inches

♦ Single crystal: 2 inches Height:30mm

Pure single crystal, no impurities, electrical properties are not guaranteed.

None

HVPE Epitaxy Furnace - Horizontal