Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
HVPE Epitaxy Furnace - Horizontal
Classification:
Ga2O3 single crystal growth and epitaxy equipment
HVPE Epitaxy Furnace
Summary:
Key words:
HVPE Epitaxy Furnace - Horizontal
Product Introduction:
This device is mainly used for epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
This device is mainly used for epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
Provide 2 inches validation process.
Provide 2 inches validation process.
Product Characteristics:
♦Substrate: 2-8 inches
Substrate size :2-8 inches
♦Quantity: 1 pcs/multiple pcs
Quantity: 1pcs/multiple pcs
♦Temperature control precision: High temperature control precision and good stability in temperature zone.
Temperature control precision : High temperature control precision and good stability in temperature zone.
♦Structure: Vertical/horizontal optional, meeting the needs of various sizes of substrates and various operation modes.
Structure: Vertical/horizontal structure is optional, can meet the needs of customers with various sizes of substrates and various operation modes.
♦Security protection function: Hardware protection + software interlock
Security protection: Hardware protection + software interlock
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HVPE Epitaxy Furnace - Vertical
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