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Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
HVPE Single-Crystal Growth Equipment — Horizontal Type
Classification:
Compound Crystal Equipment
HVPE Method Single-Crystal Growth Equipment
Summary:
Key words:
HVPE Single-Crystal Growth Equipment — Horizontal Type
Product Applications:
Applicable Fields: Single Crystal Growth, Epitaxial Growth Relevant Industries: Single Crystal Growth, Epitaxial Growth
Suitable Materials: GaN (single crystal), AlN (single crystal/epitaxial), Ga2O3 (epitaxial), GaAs (epitaxial) Suitable for Processing: GaN (single crystal), AlN (single crystal/epitaxial), Ga2O3 (epitaxial), GaAs (epitaxial)
Wafer Size: 12/8/6/4 inches
Technical Specifications / Technical Parameters:
Heating Temperature: 1100°C, 1600°C (high-temperature HVPE)
Heating Method: Resistance
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HVPE Single-Crystal Growth Equipment — Vertical
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