Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
Crucible Drop Furnace
Classification:
GaAs / InP single crystal growth equipment
Summary:
Key words:
Crucible Drop Furnace
Product Introduction:
This equipment is mainly used for the growth of compound crystals such as gallium arsenide (GaAs) and indium phosphide (InP). The equipment consists of a frame, ampoule support mechanism, heater, and control system, capable of precise control of ampoule movement and rotation.
This equipment is mainly used for crystal growth of gallium arsenide, indium phosphide and other compounds.
Product Characteristics:
♦ Industrial computer control system (Industrial computer control system, easy and simple to operate)
Industrial computer control system (Industrial computer control system, easy and simple to operate)
♦ Key components are imported to ensure the high reliability of the equipment.
The key parts are imported to ensure the high reliability of the equipment.
♦ High temperature control precision and good temperature control stability in temperature zone.
High temperature control precision and good temperature control stability in temperature zone.
♦ It has various safety protection functions such as power failure alarm, over-temperature alarm, under-temperature alarm, and extreme over-temperature alarm.
It has various safety protection functions such as power failure alarm, over-temperature alarm, under-temperature alarm and extreme over-temperature alarm.
♦ Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed.
Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed.
♦ High quality single crystal.
High quality single crystal.
♦ Wafer size: 4/6/8 inches.
Wafer size: 4/6/8 inches.
♦ Process temperature range: 300-2200℃.
Maximum heater temperature: 2200℃.
♦ Maximum heater temperature: 2200℃.
Maximum heater temperature: 2200℃.
♦ Number of temperature control sections: multi-section temperature control.
Number of temperature control sections: multi-section temperature control.
♦ Chamber pressure: 10MPa (maximum).
Chamber pressure: 10MPa (Maximum).
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