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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
PVT method long crystal furnace - resistance furnace
This device is mainly used for the growth of silicon carbide (SiC) and aluminum nitride (AIN) single crystals.
PVT method long crystal furnace - induction furnace
This device is mainly used for the growth of silicon carbide (SiC) and aluminum nitride (AIN) single crystals.
Liquid Phase Method Crystal Growth Furnace
The liquid phase method can achieve the growth of SiC single crystals at lower temperatures (below 2000℃), theoretically making it easier to obtain high-quality single crystals. It utilizes a temperature gradient as the driving force for crystal growth.