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Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
Liquid Phase Method Crystal Growth Furnace
Classification:
SiC single crystal growth equipment
Liquid Phase Method Crystal Growth Furnace
Summary:
Key words:
Liquid Phase Method Crystal Growth Furnace
Product Introduction:
This equipment is mainly used for the single crystal growth of silicon carbide (SiC). The liquid phase method can achieve the growth of SiC single crystals at much lower temperatures (<2000℃), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.
This equipment is mainly used for the single crystal growth of silicon carbide (SiC). LPE method enables the growth of SiC single crystals below much lower temperatures (<2000°C), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.
Product Characteristics:
Provide 2 inches validation process
Provide 6-8 inches validation process
♦ Crystal Size: 6/8 inches
Crystal size: 6/8 inches
♦ Temperature range: 1500-2100℃
Temperature range: 1500-2100 ℃
♦ Vacuum Pressure: 1 * 10-3pa
Vacuum Pressure: 1 * 10-3pa
♦ Lift/crucible lever: lift rate 0.2-400mm/h, rotation rate 0.5-50rpm
Lift/crucible lever: lift rate 0.2-400mm/h, rotation rate 0.5-50rpm
♦ Weighing: 6kg accuracy: 0.01g
Weighing: 6kg, accuracy 0.01g
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