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Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
PVT method long crystal furnace - resistance furnace
Classification:
SiC single crystal growth equipment
PVT method long crystal furnace
Summary:
Key words:
PVT method long crystal furnace - resistance furnace
Product Introduction:
This equipment is mainly used for the single crystal growth of silicon carbide (SiC) and aluminum nitride (AIN).
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) and aluminumnitride(AIN).
Product Characteristics:
Growable 8-inch silicon carbide crystal
Growable 8-inch silicon carbide crystal
Equipped with crucible lifting and rotating functions
Equipped with crucible lifting and rotating functions
Independently developed control system, capable of remote control
Independently developed control system, capable of remote control
Crystal Size: 6/8/12 inches
Crystal size: 6/8/12 inches
Heating temperature: 2400℃
Heating temperature: 2400℃
Heating method: induction/resistance
Heating method: induction/resistance
Temperature detection: Pyrometer
Temperature detection: Pyrometer
Extreme vacuum: 9.5E-5Pa
Extreme vacuum: 9.5E-5Pa
Gas system: 3 channels
Gas system: 3 channels
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PVT method long crystal furnace - induction furnace
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