Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
HVPE Crystal Growth Furnace - Horizontal
Classification:
GaN single crystal growth equipment
Summary:
Key words:
HVPE Crystal Growth Furnace - Horizontal
Product Introduction:
This equipment is mainly used for the growth of gallium nitride (GaN) single crystal;
This equipment is mainly used for the growth of gallium nitride (GaN) single crystal;
Provide 2 inches validation process.
Provide 2 inches validation process.
Product Characteristics:
♦Size: 2-8 inches
Substrate size: 2-8 inches
♦Quantity: 1 piece/multiple pieces
Quantity: 1 pcs/multiple pcs
♦Temperature control precision: High precision, good stability in temperature zone.
Temperature control precision: High temperature control precision and good stability in temperature zone.
♦Structure: Vertical/Horizontal optional, meets the needs of various sizes of substrates and various operation modes.
Structure: Vertical/horizontal structure is optional, can meet the needs of customers with various sizes of substrates and various operation modes.
♦Security protection function: Hardware protection + software interlock
Security protection: Hardware protection + software interlock
♦GaN single crystal growth size: 2 inches
GaN single crystal growth size: 2 inches
♦GaN single crystal growth rate: >50 microns/hour
GaN single crystal growth rate: >50 microns/hour
♦GaN single crystal layer thickness: <200 microns
GaN single crystal layer thickness: <200 microns.
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HVPE Crystal Growth Furnace - Vertical
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