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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
SiC seed crystal bonding equipment
This device bonds SiC seed crystals to graphite using an organic adhesive. Improving the bonding quality of seed crystals is the primary prerequisite to ensure the growth of high quality SiC crystals.
PVT method long crystal furnace - resistance furnace
This equipment is mainly used for the single crystal growth of silicon carbide (SiC) and aluminum nitride (AIN).
PVT method long crystal furnace - induction furnace
This equipment is mainly used for the single crystal growth of silicon carbide (SiC) and aluminum nitride (AIN).
Liquid Phase Method Crystal Growth Furnace
This equipment is mainly used for the single crystal growth of silicon carbide (SiC). The liquid phase method can achieve the growth of SiC single crystals at much lower temperatures (<2000℃), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.