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Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
SiC High Temperature Annealing Furnace
Classification:
Oxidation/Diffusion/Annealing
Semiconductor process equipment
SiC High-Temperature Annealing Furnace
Summary:
Key words:
SiC High Temperature Annealing Furnace
Product Introduction:
♦ Specially used for ion implantation annealing process of silicon carbide (SiC) and gallium nitride (GaN) devices, with a special non-metallic heating design to increase the processing temperature to 2000℃.
♦ Applicable process: Annealing of SiC and GaN wafers
Product Characteristics:
♦ The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
♦ Robot Auto Transfer
♦ Multi-point temperature control, uniform temperature
♦ Has various alarm functions and safety protection functions
Technical Indicators:
♦ Size: 6-8 inches
♦ Process temperature range: 800-2000°C
♦ Batch capacity: 50-75 pcs
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