LPCVD vertical furnace

One of the important equipment for semiconductor integrated circuit manufacturing, mainly used for POLY, D-POLY, SiN, LP-TEOS; the vertical LPCVD adopts a bell jar structure, designed with a nested cavity mechanical hand transfer component and a boat rotation component, featuring advantages such as small footprint, high film uniformity, and high process stability.

LPCVD Horizontal Furnace

LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing,which is mainly used for the growth of LP-POLY,LP-DPOLY,LP-SiN，LP-TEOS thin films.

SiC High Temperature Annealing Furnace

Specially used for ion implantation annealing process of silicon carbide (SiC) and gallium nitride (GaN) devices, with a special non-metallic heating design to increase the processing temperature to 2000℃.

SiC High Temperature Oxidation Furnace

A high-temperature oxidation process specifically designed for SiC wafers, capable of completing the oxidation process in a high-temperature vacuum environment. O2, N2O, NO, NO2 or wet oxidation can be used, using non-metallic heating and vacuum equipment.

Horizontal furnace

This equipment is one of the important process equipment in the pre production process of semiconductor production lines, used for oxidation, diffusion, annealing, alloy and other processes in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices, etc.

Vertical furnace

This equipment is one of the important process equipment in the pre production process of semiconductor production lines, used for oxidation, diffusion, annealing, alloy and other processes in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices, etc.

MPCVD Crystal Growth Furnace

This device is mainly used for the preparation of single crystal diamond. It can excite a plasma cluster with high stability, thus ensuring the continuity of single crystal growth and providing a strong guarantee for the synthesis of large-size single crystal diamond.

Vertical Bridgman Method (VB) Furnace (Non-Iridium Technology)

This equipment is mainly used for single crystal growth of Gallium Oxide (Ga2O3) (non-iridium method), where the raw material is placed in a vertical crucible and then directionally solidified from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slow cooling. Provide 2 inches validation process.

HVPE Epitaxy Furnace - Horizontal

This device is mainly used for epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.