LPCVD vertical furnace

One of the important equipment for semiconductor integrated circuit manufacturing, mainly used for POLY, D-POLY, SiN, LP-TEOS; the vertical LPCVD adopts a bell jar structure, designed with a nested cavity mechanical hand transfer component and a boat rotation component, featuring advantages such as small footprint, high film uniformity, and high process stability.

LPCVD Horizontal Furnace

LPCVD equipment is one of the important devices in semiconductor integrated circuit manufacturing, mainly used for POLY, D-POLY, SiN, LP-TEOS.

SiC High-Temperature Annealing Furnace

The ion implantation annealing process specifically designed for silicon carbide (SiC) and gallium nitride (GaN) devices uses a special metal-free heating design to raise the processing temperature to 2000℃. Applicable process: Annealing of SiC and GaN wafers.

SiC High Temperature Oxidation Furnace

High-temperature oxidation process specifically for SiC wafers, capable of completing the oxidation process in a high-temperature vacuum environment. O2, N2O, NO, NO2, or wet oxidation can be used, employing non-metal heating and vacuum equipment. Applicable process: Oxidation

Horizontal furnace

This device is one of the important process equipment in the front-end process of semiconductor production lines, used for oxidation, diffusion, annealing, alloying, and other processes in industries such as large-scale integrated circuits, discrete devices, power electronics, and optoelectronic devices. Oxidation process: Mainly used for the preparation processes of various oxide medium layers such as initial oxide layer, gate oxide layer, and field oxide layer.

Vertical furnace

This device is one of the important process equipment in the front-end process of semiconductor production lines, used for processes such as phosphorus/boron diffusion, oxidation, annealing, alloying, and sintering in industries like large-scale integrated circuits, discrete devices, power electronics, and optoelectronic devices; it is mainly used for the preparation processes of various oxide medium layers such as initial oxide layer, gate oxide layer, and field oxide layer.

MPCVD Crystal Growth Furnace

This device is mainly used for preparing single crystal diamonds. It can excite a highly stable plasma cluster, thereby ensuring the continuity of single crystal growth, providing a strong guarantee for the synthesis of large-sized single crystal diamonds.

Vertical Bridgman Method (VB) Furnace (Non-Iridium Technology)

This device is mainly used for the growth of gallium oxide (Ga2O3) single crystals (iridium-free method). The raw materials are placed in a vertical crucible, and then directional solidification is performed starting from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slowly lowering the temperature.

HVPE Epitaxy Furnace - Horizontal

This device is mainly used for the epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.