Product classification

Contact Information

Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park

Crucible Drop Furnace

Classification:

GaAs / InP single crystal growth equipment

Summary:

This device is mainly used for the growth of compound crystals such as Gallium Arsenide (GaAs) and Indium Phosphide (InP). The device consists of a rack, an ampoule support mechanism, a heater, and a control system, capable of precise control of ampoule movement and rotation.

Key words:

Crucible Drop Furnace

Product Introduction:

This equipment is mainly used for the growth of compound crystals such as gallium arsenide (GaAs) and indium phosphide (InP). The equipment consists of a frame, ampoule support mechanism, heater, and control system, capable of precise control of ampoule movement and rotation.

Product Characteristics:

♦ Industrial computer control system (Industrial computer control system, easy and simple to operate)

♦ The key parts are imported to ensure the high reliability of the equipment.

♦ High temperature control precision and good temperature control stability in temperature zone.

♦ It has various safety protection functions such as power failure alarm, over-temperature alarm, under-temperature alarm, and extreme over-temperature alarm.

♦ Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed.

♦ High quality single crystal.

♦ Wafer size: 4/6/8 inches.

♦ Process temperature range: 300-2200℃.

♦ Maximum heater temperature: 2200℃.

♦ Number of temperature control sections: multi-section temperature control.

♦ Chamber pressure: 10MPa (maximum).

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