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Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
SiC High-Temperature Annealing Furnace
Classification:
Oxidation/Diffusion/Annealing
Semiconductor process equipment
SiC High-Temperature Annealing Furnace
Summary:
Key words:
SiC High-Temperature Annealing Furnace
Product Introduction:
♦ Specially used for ion implantation annealing process of silicon carbide (SiC) and gallium nitride (GaN) devices, with a special non-metallic heating design to increase the processing temperature to 2000℃.
Specially used for ion implantation annealing process of silicon carbide (SiC) and gallium nitride (GaN) devices, with a special non-metallic heating design to increase the processing temperature to 2000 ℃.
♦ Applicable process: Annealing of SiC and GaN wafers
Applicable process: Annealing of SiC and GaN wafers
Product Characteristics:
♦ The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
♦ Robot Auto Transfer
Robot Auto Transfer
♦ Multi-point temperature control, uniform temperature
Multi-point temperature control, uniform temperature
♦ Has various alarm functions and safety protection functions
Has various alarm functions and safety protection functions
Technical Indicators:
♦ Size: 6-8 inches
♦ Process temperature range: 800-2000°C
♦ Batch capacity: 50-75 pcs
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SiC High Temperature Oxidation Furnace
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