Product display
PRODUCTS CENTER
Papua New Guinea SiC High-Temperature Oxidation Furnace
♦ Application Fields: Compound Semiconductors
Relevant Industries: Compound Semiconductors
♦ Suitable Material: SiC
Ideal for Processing: Silicon Carbide (SiC)
♦ Wafer Size: 8/6 inches
♦ Applicable Process: High-Temperature Oxidation
Category:
Papua New GuineaVertical Furnace Tube Equipment
Papua New GuineaSemiconductor chip equipment
Papua New GuineaSiC High-Temperature Oxidation Furnace
Product Description
Product Applications:
♦Applicable Fields: Compound Semiconductors Relevant Industries: Compound Semiconductors
♦Applicable Material: SiC – Suitable for Processing: Silicon Carbide (SiC)
♦ Wafer Size: 8/6 inches
♦ Applicable Process: High-Temperature Oxidation
Technical Specifications / Technical Parameters:
♦ Process Temperature Range: 800°C–1600°C
♦ Batch Size: 50 pieces Batch Capacity: 50 pcs