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Papua New Guinea SiC High-Temperature Annealing Furnace
♦ Application Fields: Compound Semiconductors
Relevant Industries: Compound Semiconductors
♦ Suitable Material: SiC
Suitable for Processing: Silicon Carbide (SiC)
♦ Wafer Size: 8/6 inches
Wafer Size: 8/6 inch
♦ Applicable Processes: High-Temperature Annealing
Applicable Processes: Annealing of SiC and GaN wafers
Category:
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Papua New GuineaSemiconductor chip equipment
Papua New GuineaSiC High-Temperature Annealing Furnace
Product Description
Product Applications
♦ Application Areas: Compound Semiconductors Relevant Industries: Compound Semiconductors
♦ Applicable Material: SiC – Suitable for Processing: Silicon Carbide (SiC)
♦ Wafer Size: 8/6 inches
♦Applicable Process: High-Temperature Annealing Applicable Processes: Annealing of SiC and GaN Wafers
Technical Specifications:
♦ Process Temperature Range: 800°C–1600°C
♦ Batch Size: 50 pieces / Batch Capacity: 50 pcs