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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
LPE Single Crystal Growth Equipment
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) .LPE method enables the growth of SiC single crystals below much lower temperatures (<2000°C), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) and aluminumnitride(AIN).
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) and aluminumnitride(AIN).
SiC seed crystal bonding equipment
The equipment is to bond SiC seed crystals to graphite by means of an organic adhesive.Improving the bonding quality of seed crystals is the primary prerequisite to ensure the growth of high quality Sic crystals.