Ga2O3 single crystal growth equipment-Product display-Liguan Microelectronics Equipment-Crystal-Graphene

This　equipment　is　mainly　Used　for　the　growth　of galiumnitride(GaN)single　crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.

HVPE single crystal growth furnace

This　equipment　is　mainly　Used　for　the　growth　of galiumnitride(GaN)single　crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.

EFG Furnace-Gallium Oxide (Ga2O3)

This equipment is mainly used for gallium oxide (Ga2O3) single crystal growth, the raw material is placed in the mold with a slit, the molten liquid rises to the top of the mold by siphoning, and is induced by the seed crystals to crystallize and grow into a single crystal.

Crucible descent equipment

This equipmentis mainly used for crystal　growth of gallium arsenide, indium phosphide and other compounds.

HVPE Epitaxial Furnace - Vertical

This　equipment　is　mainly　Used　for　the　growth　of galiumnitride(GaN)single　crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.

HVPE Epitaxial Furnace - Horizontal

This　equipment　is　mainly　Used　for　the　growth　of galiumnitride(GaN)single　crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.

Vertical Bridgman Process (VB) Furnace

This equipment is mainly used for single crystal growth of Gallium Oxide (Ga2O3) (non-iridium method), where the raw material is placed in a vertical crucible and then directionally solidified from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slow cooling.