Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
HVPE Epitaxial Furnace - Vertical
Classification:
Ga2O3 single crystal growth equipment
Summary:
Key words:
HVPE Epitaxial Furnace - Vertical
Product Introduction：
This equipment is mainly Used for the growth of galiumnitride(GaN)single crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.
Product Characteristics：
♦Substrate size :2-8 inches
♦Quantity:1pcs/multiple pcs
♦Temperature control precision : High temperature control precision and good statlity in temperature zone.
♦Structure: Vtica/horizontal structual is optional,can meet theneeds of customerswith various sizes ofsubstrates and variousoperation ♦modes. 安全保护功能:硬件保护+软件互锁 Security protection: Hardware protection+software interlock
♦Security protection: Hardware protection+software interlock
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HVPE Epitaxial Furnace - Horizontal