Product classification

Contact Information

Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park

LPE Epitaxial Equipment

Classification:

First generation semiconductor process equipment

Summary:

♦ Vapor phase epitaxy is a single crystal thin layer growth method ♦ In a broad sense, vapor phase epitaxy is a special way of chemical vapor deposition. The crystal structure of the grown thin layer is the continuation of the single crystal substrate and maintains a corresponding relationship with the crystal orientation of the substrate ♦ In the development of semiconductor science and technology, gas phase epitaxy has played an important role ♦ The arsenic trace (GaAs) vapor phase epitaxial growth of arsenic whale (GaAs) high purity, good electrical properties, widely used in Hall devices, Gunn diodes, field effect transistors and other microwave devices

Key words:

LPE Epitaxial

LPE Epitaxial Equipment

Product Introduction：

♦ Vapor phase epitaxy is a single crystal thin layer growth method

♦ Vapor phase epitaxy is a special method of chemical vapor deposition in a broad sense, in which the crystal structure of the thin layer is a continuation of the single crystal substrate and keeps correspond-ing relationship with the crystal orientation of the substrate

♦ In the development of semiconductor science and technology, gas phase epitaxy has played an import-ant role

♦ Gallium arsenide (GaAs) grown by gas phase epitaxy technology has high purity and good electrical properties, and is widely used in Hall devices, Gunn diodes, field effect transistors and other microwave devices

Product Characteristics：

♦ The growth chamber of this equipment adopts vertical quartz reaction growth chamber.The wholeequipment includes the following subsystems: reaction growth chamber system, heating system,substrate support transmission system, gas path system, water cooling system, alarm system, gassupply and purification system, pneumatic system and control system

♦ The maximum rotation speed can reach 3000 revolutions

♦ Multi-crucible conversion.

Scope:

♦ lt is widely used in Hall devices,Gunn diodes, field effect transistors and other microwave devices

Vacuum Annealing Equipment

None