Product classification

Contact Information

Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park

PECVD Horizontal

Classification:

First generation semiconductor process equipment

Summary:

♦PECVD is mainly used for thin film growth of silicon oxide (SiO₂) and silicon nitride (SiN4) materials. The working principle is to introduce a high-frequency radio frequency power supply at low voltage, adopt a capacitive coupling method to ionize and discharge the process gas to form a plasma state, and generate a large number of Active groups, these active groups chemically react on the surface of the substrate material and deposit on the surface of the substrate to grow a silicon oxide (SiO₂) or silicon nitride (SiN4) film.

Key words:

PECVD (Vertical/Horizontal)

PECVD Horizontal

Product Introduction：

♦ PECVD is mainly used for thin film growth of silicon oxide (SiO₂) and silicon nitride (SiN₄) materials, The working principle is to introduce a high-frequency RF power supply at low voltage, ionize and discharge the process gas by capacitive coupling, and form a plasma state, which produces a large number of active groups. These active groups react chemically on the surface of the substrate material and depos- it on the bottom surface of the village, and grow silicon oxide (SiO₂) or silicon nitride (SiN₄) thin films.

Product Characteristics：

♦ High film quality

♦ Small volume, small floor area and simple operation

♦ Has good process performance and wide application range

Technical Indicators:

Wafer size: Max. 8 inches	Temperature: 50°C-900°C
Vacuum system: dry pump molecular pump

Scope：

♦ It can be used to prepare silicon oxide (SiO₂) or silicon nitride (SiO₂) thin films in semiconductor de- vices, power electronic devices, optoelectronics and other industries.

LPCVD vertical

Oxidation/Diffusion Equipment