Product classification

Contact Information

Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park

LPCVD vertical

Classification:

First generation semiconductor process equipment

Summary:

♦LPCVD equipment is one of the important equipment for the manufacture of semiconductor integrated circuits, mainly used for the growth of polysilicon, silicon nitride, silicon oxide film, it is the raw material gas (or liquid source gasification) with thermal energy to activate the chemical reaction to generate a solid film on the surface of the substrate. LPCVD process is carried out under low pressure, due to the low pressure, the average free path of gas molecules is large, so that the growth of the film uniformity is good, in addition to the substrate can be placed vertically so that the equipment is large, especially suitable for industrial production.

Key words:

LPCVD (Vertical/Horizontal)

LPCVD vertical

Product Introduction：

♦ LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing, which is mainly used for the growth of polysilicon, silicon nitride and silicon oxide thin films. It activates raw material gas (or liquid source gasification) with heat energy to generate solid thin films on the substrate surface. LPCVD process is carried out under low pressure. Because of low pressure and large average free path of gas molecules, the uniformity of the grown film is good. The substrate can be placed vertically, which makes the equipment load large, especially suitable for industrial production.

♦ Vertical LPCVD adopts bell jar structure, and designs nested cavity manipulator film transmission assembly and boat rotation assembly, which has the advantages of small occupied area, high film formation uniformity and high process stability. It is mainly used for preparing silicon dioxide, doped polysilicon and silicon nitride films.

Product Characteristics：

♦ Fully automatic transmission, accurate positioning, stability and reliabilityt

♦ High cleanliness process environment, effective pollution control

♦ High uniformity of film formation

♦ The temperature control adopts cascade control mode, and the real-time itelligent control of the actual temperature of the substrate is carried out

♦ Silicon carbide (SiC) cantilever paddle is used for loading, which avoids dust generated by friction with process pipe

♦ Closed loop automatic control of working pressure Improves process stabilty and repeatabllty

Technical Indicators:

Wafer type: 6/8/12 inch wafer	Length of constant temperature zone: ≥860mm
Operating temperature range: 500°C- 1000°C	Temperature control accuracy:土1°C