SiC high temperature oxidation equipment

♦It is specially used for the oxidation treatment of silicon carbon compound (SiC), which can realize the high temperature oxidation process of SiC wafer in high temperature vacuum environment. The oxidation process uses wet oxidation gas or N2O, NO, NO2, which is the safest toxic gas oxidation furnace. ♦The equipment is suitable for high temperature oxidation process in the manufacture of SiC-based power devices. ♦The heating chamber and the process chamber are independently sealed and designed to provide the cleanliness of the process chamber.

SiC High Temperature Annealing Equipment

♦It is specially used for ion activation and annealing treatment of silicon carbon compound (SiC), which can realize the active process of SiC wafer in high temperature vacuum environment. ♦The equipment is suitable for ion activation and annealing processes in the manufacture of SiC-based power devices. ♦The heating chamber and the process chamber are independently sealed and designed to provide the cleanliness of the process chamber.

LPCVD horizontal

♦LPCVD equipment is one of the important equipment for the manufacture of semiconductor integrated circuits, mainly used for the growth of polysilicon, silicon nitride, silicon oxide film, it is the raw material gas (or liquid source gasification) with thermal energy to activate the chemical reaction to generate a solid film on the surface of the substrate. LPCVD process is carried out under low pressure, due to the low pressure, the average free path of gas molecules is large, so that the growth of the film uniformity is good, in addition to the substrate can be placed vertically so that the equipment is large, especially suitable for industrial production.

LPCVD vertical

♦LPCVD equipment is one of the important equipment for the manufacture of semiconductor integrated circuits, mainly used for the growth of polysilicon, silicon nitride, silicon oxide film, it is the raw material gas (or liquid source gasification) with thermal energy to activate the chemical reaction to generate a solid film on the surface of the substrate. LPCVD process is carried out under low pressure, due to the low pressure, the average free path of gas molecules is large, so that the growth of the film uniformity is good, in addition to the substrate can be placed vertically so that the equipment is large, especially suitable for industrial production.

PECVD Horizontal

♦PECVD is mainly used for thin film growth of silicon oxide (SiO₂) and silicon nitride (SiN4) materials. The working principle is to introduce a high-frequency radio frequency power supply at low voltage, adopt a capacitive coupling method to ionize and discharge the process gas to form a plasma state, and generate a large number of Active groups, these active groups chemically react on the surface of the substrate material and deposit on the surface of the substrate to grow a silicon oxide (SiO₂) or silicon nitride (SiN4) film.

Oxidation/Diffusion Equipment

♦The equipment is one of the important process equipment before the semiconductor production line, used for large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices and other industries, such as diffusion, oxidation, annealing, alloy and sintering process ♦A variety of process performance requirements for silicon wafer production are designed, which has the characteristics of high growth efficiency and superior product performance ♦It has the advantages of low pollution, small footprint, uniform temperature, large wafer size and high process stability ♦It is mainly used for the preparation process of various oxide dielectric layers such as initial oxide layer, shielding oxide layer, pad oxide layer, sacrificial oxide layer, field oxide layer, etc

Vacuum Annealing Equipment

◆ Mainly used for annealing and sintering of semiconductor devices and other processes, can be vacuum, gas protection, etc. ♦ The equipment structure is novel, easy to operate ◆ Multiple processes can be completed on one device

LPE Epitaxial Equipment

♦ Vapor phase epitaxy is a single crystal thin layer growth method ♦ In a broad sense, vapor phase epitaxy is a special way of chemical vapor deposition. The crystal structure of the grown thin layer is the continuation of the single crystal substrate and maintains a corresponding relationship with the crystal orientation of the substrate ♦ In the development of semiconductor science and technology, gas phase epitaxy has played an important role ♦ The arsenic trace (GaAs) vapor phase epitaxial growth of arsenic whale (GaAs) high purity, good electrical properties, widely used in Hall devices, Gunn diodes, field effect transistors and other microwave devices