Contact Information


Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park

Telephone:+86-15562450816

Mailbox:liguan1218@163.com

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  • SiC高温氧化炉.1.jpg

SiC high temperature oxidation equipment


Classification:

Third generation semiconductor process equipment

First generation semiconductor process equipment


Summary:

♦It is specially used for the oxidation treatment of silicon carbon compound (SiC), which can realize the high temperature oxidation process of SiC wafer in high temperature vacuum environment. The oxidation process uses wet oxidation gas or N2O, NO, NO2, which is the safest toxic gas oxidation furnace. ♦The equipment is suitable for high temperature oxidation process in the manufacture of SiC-based power devices. ♦The heating chamber and the process chamber are independently sealed and designed to provide the cleanliness of the process chamber.

Key words:



SiC high temperature oxidation equipment


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