Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
SiC High Temperature Annealing Equipment
Classification:
Third generation semiconductor process equipment
First generation semiconductor process equipment
Summary:
Key words:
SiC High Temperature Annealing
SiC High Temperature Annealing Equipment
Product overview/Product Introduction
♦ It is specially used for ion activation and annealing treatment of silicon carbon compound (SiC), which can realize the active process of Sic wafer in high temperature and vacuum environment.
♦ The equipment is suitable for ion activation and annealing process in the manufacture of SiC-based power devices
♦ The heating chamber and the process chamber are designed independently and sealed to provide the cleanliness of the process chamber
Product Characteristics：
♦ The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
♦ Robot Auto Transfer (Optional)
♦ Multi-point temperature control, uniform temperature
♦ Has various alarm functions and safety protection functions
♦ The heating chamber and the process chamber are designed independently to provide the cleanliness of the process chamber
Technical Indicators:
|
Wafer size: 4/6 inches |
Operating temperature range: 800-2000°C |
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Loading capacity: 50/80 tablets |
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Scope:
♦ Lon activation and annealing treatment for SiC-based semiconductor materials
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