Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
HVPE single crystal growth furnace
Classification:
Ga2O3 single crystal growth equipment
Summary:
Key words:
HVPE single crystal growth furnace
Product Introduction：
This equipment is mainly Used for the growth of galiumnitride(GaN)single crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.
Product Characteristics：
♦Substrate size :2-8 inches
♦Quantity:1pcs/multiple pcs
♦Temperature control precision : High temperature control precision and good statlity in temperature zone.
♦Structure: Vtica/horizontal structual is optional,can meet theneeds of customerswith various sizes ofsubstrates and variousoperation ♦modes. 安全保护功能:硬件保护+软件互锁 Security protection: Hardware protection+software interlock
♦GaN single crystal growth size:2 inches
♦GaN single crystal growth rate:＞50 microns/Hr
♦GaN single crystal layer thickness:＜200 microns
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HVPE single crystal growth furnace