Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
LPE Single Crystal Growth Equipment
Classification:
SiC single crystal growth equipment
Summary:
Key words:
LPE Single Crystal Growth Equipment
Product Introduction：
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) .LPE method enables the growth of SiC single crystals below much lower temperatures (<2000°C), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.
Product Characteristics：
♦ Crystal size: 6/8 inches
♦ Temperature range: 1500-2100 ℃
♦ Vacuum Pressure: 1 * 10-3pa
♦Lift/crucible lever: lift rate 0.2-400mm/h, rotation rate 0.5-50rpm
♦ Weighing: 6kg, accuracy 0.01g
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