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LPE Epitaxial
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♦ Vapor phase epitaxy is a single crystal thin layer growth method ♦ In a broad sense, vapor phase epitaxy is a special way of chemical vapor deposition. The crystal structure of the grown thin layer is the continuation of the single crystal substrate and maintains a corresponding relationship with the crystal orientation of the substrate ♦ In the development of semiconductor science and technology, gas phase epitaxy has played an important role ♦ The arsenic trace (GaAs) vapor phase epitaxial growth of arsenic whale (GaAs) high purity, good electrical properties, widely used in Hall devices, Gunn diodes, field effect transistors and other microwave devices
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