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PECVD (Vertical/Horizontal)
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♦PECVD is mainly used for thin film growth of silicon oxide (SiO₂) and silicon nitride (SiN4) materials. The working principle is to introduce a high-frequency radio frequency power supply at low voltage, adopt a capacitive coupling method to ionize and discharge the process gas to form a plasma state, and generate a large number of Active groups, these active groups chemically react on the surface of the substrate material and deposit on the surface of the substrate to grow a silicon oxide (SiO₂) or silicon nitride (SiN4) film.
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