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Address: Jinan Wide Band-gap Semiconductor Industrial Park, Huaiyin District, Jinan City
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
LPE Single Crystal Growth Equipment
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) .LPE method enables the growth of SiC single crystals below much lower temperatures (<2000°C), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) and aluminumnitride(AIN).
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) and aluminumnitride(AIN).
SiC seed crystal bonding equipment
The equipment is to bond SiC seed crystals to graphite by means of an organic adhesive.Improving the bonding quality of seed crystals is the primary prerequisite to ensure the growth of high quality Sic crystals.
HVPE single crystal growth furnace
This equipment is mainly Used for the growth of galiumnitride(GaN)single crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.
HVPE single crystal growth furnace
This equipment is mainly Used for the growth of galiumnitride(GaN)single crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.
EFG Furnace-Gallium Oxide (Ga2O3)
This equipment is mainly used for gallium oxide (Ga2O3) single crystal growth, the raw material is placed in the mold with a slit, the molten liquid rises to the top of the mold by siphoning, and is induced by the seed crystals to crystallize and grow into a single crystal.
This equipmentis mainly used for crystal growth of gallium arsenide, indium phosphide and other compounds.
HVPE Epitaxial Furnace - Vertical
This equipment is mainly Used for the growth of galiumnitride(GaN)single crystal；Used for the epitaxial growth of gallium oxide （Ga2O3），aluminum nitride（AIN）， indium phosphide（InP）and gallium arsenide（GaAs）.