Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
Gallium Nitride (GaN) HVPE Single Crystal Growth Equipment Horizontal Type
Classification:
Third generation semiconductor process equipment
Summary:
Key words:
Gallium Nitride (GaN) HVPE Single Crystal Growth Equipment Horizo
Gallium Nitride (GaN) HVPE Single Crystal Growth Equipment Horizontal Type
Product Introduction：
♦ Used for the growth of gllium nitride (GaN) single crystal
♦ Used for the epitaxial growth of gallium oxide (Ga₂O₃), aluminum nitride (AIN), indium. phosphide (InP) and gallium arsenide (GaAs)
Product Characteristics：
♦ Basic process package
1. Gallium nitride (GaN) single crystal growth size: 2 inches
2. Single crystal growth rate:≥50 microns/hour
3. Thickness of gallium nitride (GaN) single crystal layer grown by epitaxial growth at the bottom of sapphire village: < 200 microns
♦ Substrate size: 2/4/6 inches
♦ Quantity: 1 tablet/multiple tablets
♦ Vertical/horizontal structure is reasonable and reliable, which can meet the needs of customers with various sizes of substrates and various operation modes
♦ High temperature control precision and good stability in temperature zone
♦ Perfect and reliable security protection function: Hardware protection software interlock.
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Gallium Nitride (GaN) HVPE Single Crystal Growth Equipment Vertical