Product classification
Contact Information
Address: Jinan, Huaiyin District, Jinan City, Jinan Wide Forbidden Belt Semiconductor Industrial Park
Telephone:+86-15562450816
Mailbox:liguan1218@163.com
PVT Single Crystal Growth Equipment
Classification:
Third generation semiconductor process equipment
Summary:
Key words:
PVT Single Crystal Growth
PVT Single Crystal Growth Equipment
Product Introduction：
♦ This equipment is mainly used for the single crystal growth of silion carbide (SiC) and aluminum nitride (AIN)
Product Characteristics：
♦ Two process packages are provided
① Shape package: 6-inch carbide silicon (SiC) single crystal is produced without cracking.
② Process package: Crystal form: 4H
Resistivity: 0.015 ~ 0.025 ohm . cm
Diameter: 150.25士0.25 mm
Thickness:≥10 (Figure 2) mm
Microtubule density:≤3 ea/cm²
TSD: ≤1000ea/cm²
♦ Temperatures up to 2400°C
♦ Heating mode: induction and resistance
♦ Substrate size: 4/6/8 inches
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