Gallium Nitride (GaN) HVPE Single Crystal Growth Equipment Horizontal Type

♦For Gallium Nitride (GaN) Single Crystal Growth ♦For epitaxial growth of gallium oxide (Ga₂ Oconstruction), aluminum nitride (AIN), indium phosphide (InP), gallium arsenide (GaAs)

Gallium Nitride (GaN) HVPE Single Crystal Growth Equipment Vertical

♦For Gallium Nitride (GaN) Single Crystal Growth ♦For epitaxial growth of gallium oxide (Ga₂ Oconstruction), aluminum nitride (AIN), indium phosphide (InP), gallium arsenide (GaAs)

PVT Single Crystal Growth Equipment

♦This equipment is mainly used for silicon carbide (SiC), aluminum nitride (AIN) single crystal growth

SiC Seed Crystal Bonding Equipment

♦The bonding technology of seed crystal is to bond the SiC seed crystal to the graphite paper by organic glue. Improving the quality of seed bonding is the primary prerequisite to ensure the growth of high-quality SiC crystals.

MPCVD Equipment

♦Microwave plasma chemical vapor deposition (MPCVD) technology, through the plasma to increase the reaction rate of the precursor, reduce the reaction temperature. It is suitable for preparing diamond single crystal and polycrystalline films with large area, good uniformity, high purity and good crystal morphology.

SiC high temperature oxidation equipment

♦It is specially used for the oxidation treatment of silicon carbon compound (SiC), which can realize the high temperature oxidation process of SiC wafer in high temperature vacuum environment. The oxidation process uses wet oxidation gas or N2O, NO, NO2, which is the safest toxic gas oxidation furnace. ♦The equipment is suitable for high temperature oxidation process in the manufacture of SiC-based power devices. ♦The heating chamber and the process chamber are independently sealed and designed to provide the cleanliness of the process chamber.

SiC High Temperature Annealing Equipment

♦It is specially used for ion activation and annealing treatment of silicon carbon compound (SiC), which can realize the active process of SiC wafer in high temperature vacuum environment. ♦The equipment is suitable for ion activation and annealing processes in the manufacture of SiC-based power devices. ♦The heating chamber and the process chamber are independently sealed and designed to provide the cleanliness of the process chamber.